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ECE 482
Digital IC Design

Credit:  3 hours.


(ECE 382) Bipolar and MOS field effect transistor characteristics; VLSI fabrication techniques for MOS and bipolar circuits; calculation of circuit parameters from the process parameters; and design of VLSI circuits such as logic, memories, charge-coupled devices, and A/D and D/A converters. Prerequisite: ECE 290 and ECE 442