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ECE 441 Physcs & Modeling Semicond Dev
Credit: 3 hours.
Detailed presentation of advanced concepts such as generation-recombination, hot electron effects, and breakdown mechanisms; essential features of small ac characteristics, switching and transient behavior of p-n junctions, bipolar and MOS transistors; addresses fundamental issues for device modeling and discusses the perspective and limitations of Si-devices. Prerequisite: ECE 440.
Section Information
| CRN | Type | Section | Time | Days | Location | Instructor |
| 33888 | lecture- discussion | D | 11:00 AM - 11:50 AM | MWF | room 241 Everitt Elec and Comp Engr Lab | Leburton, J |
3 hours
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